Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors

摘要

Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been realized with an ultra-thin-body (UTB) channel of down to 6 nm. The hole mobility of 166 cm(2)/V s has been realized at an N-s value of 10(13) cm(-2) attributable to the reduction of carrier scattering by interface traps under a bulk transport behavior for the devices. The back bias dependence of the hole mobility in junctionless UTB GOI pMOSFETs was examined; it is found that the hole mobility in the devices is dominated by the surface roughness scattering at the MOS interface. Published under license by AIP Publishing.