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Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility

机译：具有有效空穴迁移率的应变锗锡（GeSn）P沟道金属氧化物半导体场效应晶体管

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Yan Liu; Jing Yan; Hongjuan Wang; Buwen Cheng; Genquan Han;
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1. Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility [J] . Liu Yan, Yan Jing, Wang Hongjuan, International Journal of Thermophysics . 2015,第5a6期

机译：具有高有效空穴迁移率的应变锗锡（GeSn）P沟道金属氧化物半导体场效应晶体管
2. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation [J] . Lanxiang Wang, Shaojian Su, Wei Wang, Solid-State Electronics . 2013,第may期

机译：带有硫化铵钝化的应变锗锡（GeSn）p沟道金属氧化物半导体场效应晶体管（p-MOSFETs）
3. Temperature Dependence Of Enhanced Hole Mobility In Uniaxial Strained P-channel Metal-oxide-semiconductor Field-effect Transistors And Insight Into The Physical Mechanisms [J] . Xiaodong Yang, Srivatsan Parthasarathy, Yongke Sun, Applied Physicsletters . 2008,第24期

机译：单轴应变P沟道金属氧化物半导体场效应晶体管中空穴迁移率的温度依赖性及其物理机制的研究
4. High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules [C] . Genquan Han, Shaojian Su, Chunlei Zhan, 2011 IEEE International Electron Devices Meeting . 2011

机译：高迁移率锗锡（GeSn）P沟道MOSFET，具有金属源/漏和低于370°C的处理模块
5. Advanced Germanium-Tin P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors [D] . Lei, Dian. 2018

机译：先进的锗 - 锡P沟道金属氧化物半导体场效应晶体管
6. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas [O] . Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, -1

机译：基于极化诱导的二维空穴气的P沟道InGaN / GaN异质结构金属氧化物半导体场效应晶体管
7. Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers [O] . Palmer, M. J. (Martin J.), Braithwaite, Glyn, Grasby, T. J., 2001

机译：具有薄硅覆盖层的伪非晶Si / SiGe / Si p沟道金属氧化物半导体场效应晶体管中的有效迁移率
8. Strained GaSb/AlAsSb Quantum Wells for p-Channel Field-Effect Transistors [R] . Bennett, B. R., Ancona, M. G., Boos, J. B., 2008

机译：用于p沟道场效应晶体管的应变Gasb / alassb量子阱

Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility

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