Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation

摘要

The authors present an accurate one-dimensional device model for the simulation of nMOS transistors with hot-carrier-induced oxide damage. The model uses a realistic charge density distribution profile to account for the localization of the oxide-interface charge near the drain. Model simulation results obtained for nMOS transistors with hot-carrier-induced oxide damage demonstrate good agreement with the experimental data. The amount and the location of the hot-carrier-induced oxide damage are simulated by using only a few parameters, which simplifies the implementation of the model in a reliability simulation environment. The proposed model has been implemented in the iSMILE circuit simulator, and the capabilities of the model have been explored by various circuit simulation examples. The damaged-MOSFET model presented offers a simple and accurate approach for simulating the circuit behavior after hot-carrier damage.