Simulation method using a transistor model, and, based on the simulation method using a transistor model, the operation control method for a circuit comprising a field effect transistor

摘要

PROBLEM TO BE SOLVED: To provide a simulation method using a transistor model for performing operation analysis, while being reflected with changes in the threshold voltage, caused by the change in potential distribution in a channel-forming region of a field effect transistor.;SOLUTION: A simulation method that uses a transistor model 10 performs operation analysis, while being reflected with changes in the threshold voltage caused by a change in the potential distribution in the channel-forming region of the field effect transistor. The method includes the steps of (1) calculating the threshold voltage change amount, based on a value obtained by a model 20 for threshold voltage calculation specified to be reflected of a relation, between the change in the potential distribution in the channel-forming region and a carrier captured/discharged in accordance with the local location level in the channel-forming region; (2) correcting the value of the threshold voltage, based on the amount of the threshold voltage change; and (3) analyzing the operation of the circuit model comprising the transistor model 10, based on the corrected value of the threshold voltage.;COPYRIGHT: (C)2008,JPO&INPIT