A mobility model for submicrometer MOSFET simulations including hot-carrier-induced device degradation

摘要

The model presented includes the quantum effects of electrons in the inversion layer proposed by S.A. Schwarz and S.E. Russek (1983) and the surface scattering effects due to the interfacial charges. By comparison with experimental data from scaled MOSFETs, the limitation of K. Yamaguchi's (1983) mobility model in submicrometer device simulations is implied, while the quantum channel broadening effects have been proven significant in turn. In addition, it is shown that the modeling of the screening effect of Coulomb scattering plays an important role in simulating the hot-carrier-induced MOSFET degradation. The model can predict the current-voltage characteristics within 5% accuracy for scaled MOSFETs down to 0.5- mu m, as well as the degradation of electrical characteristics due to hot-carrier effects for submicrometer MOSFETs.