A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

摘要

This paper presents a carrier-based approach to develop a compact model for long-channel undoped symmetric double-gate MOSFETs. The formulation starts from a solution of the Poisson's equation that is coupled to the Pao–Sah current formulation to obtain an analytic drain–current model in terms of the carrier concentration. The model provides an analytical expression to describe the dependence of the surface potential, silicon-film centric potential, inversion charge, and the current on the silicon-body thickness and the gate-oxide thickness. The model calculation is verified by comparing results to the 2-D numerical simulations, and good agreement is observed.