METHOD FOR PRODUCING ASYMMETRIC DOUBLE-GATE TRANSISTORS, WHEREBY SYMMETRIC AND ASYMMETRIC DOUBLE-GATE TRANSISTORS CAN BE PRODUCED ON THE SAME SUBSTRATE

摘要

The invention relates to a method for producing a microelectronic device with one or more double-gate transistors, comprising a step in which one or more structures (150, 250, 260, 350, 360) are formed on a substrate (100), said structures comprising respectively at least a first block (110a, 310a) intended to form a first gate of a double-gate and at least a second block (120a, 320a) intended to form the second gate of the double-gate, said first and second blocks being located on either side of at least one semiconductor zone (115a).