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METHOD FOR PRODUCING ASYMMETRIC DOUBLE-GATE TRANSISTORS, WHEREBY SYMMETRIC AND ASYMMETRIC DOUBLE-GATE TRANSISTORS CAN BE PRODUCED ON THE SAME SUBSTRATE
METHOD FOR PRODUCING ASYMMETRIC DOUBLE-GATE TRANSISTORS, WHEREBY SYMMETRIC AND ASYMMETRIC DOUBLE-GATE TRANSISTORS CAN BE PRODUCED ON THE SAME SUBSTRATE
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机译:生产非对称双栅极晶体管的方法,可以在同一基板上生产对称和非对称双栅极晶体管
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摘要
The invention relates to a method for producing a microelectronic device with one or more double-gate transistors, comprising a step in which one or more structures (150, 250, 260) are formed on a substrate (100), said structures comprising respectively at least a first semiconductor block (110a, 210a) intended to form a first gate of a double-gate and at least a second semiconductor block (120a) intended to form the second gate of the double-gate, said first and second blocks being located on either side of at least one semiconductor zone (115).
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