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A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach

机译：基于非电荷片的非对称双栅mOsFET采用spp方法的分析模型

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Jin He; Xuemei Xi; Mansun Chan; Chung-hsun Lin; Ali Niknejad; Chenming Hu;
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年度 2014
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1. A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes [J] . Liu F., He J., Zhang J., IEEE Transactions on Electron Devices . 2008,第12期

机译：具有部分耗尽模式和完全耗尽操作模式之间的平滑过渡的对称双栅极MOSFET的非电荷表解析模型
2. A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs [J] . He J., Liu F., Zhang J., IEEE Transactions on Electron Devices . 2007,第5期

机译：一种基于载流子的长通道非掺杂对称双栅MOSFET紧凑模型建模方法
3. A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs [J] . Jin He, Feng Liu, Jian Zhang, IEEE Transactions on Electron Devices . 2007,第期

机译：一种基于载流子的长通道非掺杂对称双栅MOSFET紧凑模型建模方法
4. A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs using SPP approach [C] . Jin He, Xuemei, X., . 2004

机译：使用SPP方法的非掺杂对称双栅极MOSFET的基于非电荷表的分析模型
5. Process-based compact modeling and analysis of silicon-on-insulator CMOS devices and circuits, including double-gate MOSFETs. [D] . Chiang, Meng-Hsueh. 2001

机译：对绝缘体上硅CMOS器件和电路（包括双栅MOSFET）的基于过程的紧凑建模和分析。
6. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
7. Analytic and explicit current model of undoped double-gate MOSFETs [O] . Z. Zhu, X. Zhou, S. C. Rustagi, 2013

机译：未掺杂双栅极MOSFET的解析和显式电流模型
8. Prognostics of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven and Model-Based Methodologies. [R] . Celaya, J., Saxena, A., Saha, S., 2011

机译：利用数据驱动和基于模型的方法在热应力加速老化下预测功率mosfets。

A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach

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