首页>
外国专利>
Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate
Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate
展开▼
机译:制造不对称双栅极晶体管的方法,通过该方法可以在同一基板上制造不对称和对称双栅极晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for fabricating a microelectronic device with one or several asymmetric and symmetric double-gate transistors on the same substrate.
展开▼