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Electron Devices and Solid-State Circuits, 2005 IEEE Conference on

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1.Implementation of Perfect-Magnetic-Coupling Ultra-Low-Loss Transformer in Standard RFCMOS Technology

机译：采用标准RFCMOS技术实现磁耦合超低损耗变压器
- 作者：Yo-Sheng Lin;Hsiao-Bin Liang;Yan-Ru Tzeng
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
- Magnetic-coupling;
- SOC;
- interlaced;
- silicon substrate;
- stacked;
- transformer;
- Magnetic-coupling;
- SOC;
- interlaced;
- silicon substrate;
- stacked;
- transformer;
2.Investigation of RF Performance of Nano-Scale Ultra-Thin-Body Schottky-Barrier MOSFETs Using Monte Carlo Simulation

机译：蒙特卡罗模拟研究纳米级超薄肖特基势垒MOSFET的射频性能
- 作者：Zhiliang Xia;Gang Du;Xiaoyan Liu;Jinfeng Kang;Ruqi Han
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
3.Isolated Current Feedback Control for Buck Converter

机译：Buck转换器的隔离式电流反馈控制
- 作者：Arayawat S.;Pongswatd S.;Ukakimapurn P.;Trisuwannawat T.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
4.lGb/s Ground Referenced Low Voltage Differential Signal I/O Interface in 0.35μm CMOS

机译：采用0.35μmCMOS的lGb / s接地参考低压差分信号I / O接口
- 作者：Yu-Sheng Tiao;Meng-Lieh Sheu;Yen-Po Chen
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
5.Local Study of DC and Dynamic Electrical Stress Induced Ultrathin Gate Oxide Soft-Breakdown by Scanning Tunneling Microscopy

机译：扫描隧道显微镜对直流和动态电应力引起的超薄栅氧化物软击穿的局部研究
- 作者：Xue K.;An J.;Wang L.;Yu X.J.;Ho H.P.;Xu J.B.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
6.Low-Voltage Analog Circuit Techniques Using Bias-Current Re-Utilization, Self-Biasing and Signal Superposition

机译：利用偏置电流再利用，自偏置和信号叠加的低压模拟电路技术
- 作者：Hoi Lee;Ka Nang Leung;Mok P.K.T.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
7.Methodology to Evaluate the Robustness of Integrated Circuits under Cable Discharge Event

机译：评价电缆放电事件下集成电路鲁棒性的方法
- 作者：Tai-Xiang Lai;Ming-Dou Ker
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
8.Modeling of Low-Frequency Noise in Junction Field-Effect Transistor with Self-Aligned Planer Technology

机译：利用自对准平面技术对结型场效应晶体管中的低频噪声进行建模
- 作者：Yue Fu;Hei Wong;Liou J.J.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
- JFET;
- Low-frequency noise;
- modeling;
- self-aligned;
- shallow trench isolation;
- JFET;
- Low-frequency noise;
- modeling;
- self-aligned;
- shallow trench isolation;
9.Modeling of Traveling Wave Electro-absorption Modulator for High Speed Optical Communication Systems

机译：高速光通信系统行波电吸收调制器的建模
- 作者：Jeon S.C.;Chung Y.D.;Kang Y.S.;Kim J.;Yun I.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
10.Novel ultra-low power RF Lateral BJT on SOI-CMOS compatible substrate

机译：SOI-CMOS兼容基板上的新型超低功率RF横向BJT
- 作者：Sun I.-S.M.;Wai Tung Ng;Mochizuki H.;Kanekiyo K.;Kobayashi T.;Toita M.;Imai H.;Ishikawa A.;Tamura S.;Takasuka K.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
11.Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1-χGeχRTD at Room Temperature

机译：Si / Si 1-χ Ge χ RTD室温下负差分电阻特性的数值模拟
- 作者：Tao Li;Zhiping Yu;Yan Wang;Lei Huang;Cailan Xiang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
12.Orientation-Dependent Energy Bandstructure Calculation for Silicon Nanowires Using Supercell Approach with the Tight-Binding Method

机译：超级束结合紧束缚法计算硅纳米线的取向相关能带结构
- 作者：Ximeng Guan;Zhiping Yu
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
13.Parasitic Minimization in RF Multi-Fin FETs

机译：RF多鳍FET中的寄生最小化
- 作者：Wen Wu;Zhikuan Zhang;Mansun Chan
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
14.RF Model of Lateral Bipolar Junction Transistor on Silicon-on-Insulator Substrate

机译：绝缘体上硅衬底上的横向双极结型晶体管的射频模型
- 作者：Lee D.;Sun I.-S.M.;Wai Tung Ng
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
15.RF Performance and Scaling Capability of Thin-body GOI and SOI MOSFETs

机译：薄体GOI和SOI MOSFET的射频性能和缩放能力
- 作者：Xia An;Ru Huang;Jing Zhuge;Xing Zhang;Yangyuan Wang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
16.Simulation of MOSFET Devices and Circuits Fabricated on Selective Buried Oxide (SEL-BOX) Substrates

机译：在选择性掩埋氧化物（SEL-BOX）衬底上制造的MOSFET器件和电路的仿真
- 作者：Pal C.;Mazhari B.;Iyer S.S.K.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
17.Suppressed Growth of Interlayer GeOxin Ge MOS Capacitors with Gate Dielectric Prepared in Wet NO Ambient

机译：湿态环境下制备栅极介电层可抑制Ge MOS电容器中层间GeO x 的生长
- 作者：Lai P.T.;Li C.X.;Xu J.P.;Zou X.;Chan C.L.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
18.The impact of mobility modulation technology on device performance and reliability for sub-90nm SOI MOSFETs

机译：迁移率调制技术对90nm以下SOI MOSFET器件性能和可靠性的影响
- 作者：Yeh W.-K.;Lai C.-M.;Lin C.-T.;Fang Y.-K.;Hu H.-H.;Chen K.-M.;Huang G.-W.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
19.Variable Inductance Planar Spiral Inductors and CMOS Wideband Amplifiers with Inductive Peaking

机译：具有电感峰值的可变电感平面螺旋电感器和CMOS宽带放大器
- 作者：Yo-Sheng Lin;Hsiao-Bin Liang;Jia-Lun Chen;Ke-Hou Chen;Shey-Shi Lu
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
- CMOS;
- Inductive Peaking;
- Variable Inductance Inductor;
- Wideband Amplifier;
- CMOS;
- Inductive Peaking;
- Variable Inductance Inductor;
- Wideband Amplifier;
20.Variable Negative Gm Technique for RF LC VCO with Very Large Tuning Range

机译：具有很大调谐范围的RF LC VCO的可变负Gm技术
- 作者：Shi H.;Liu J.H.;Zhang G.Y.;Liao H.L.;Huang R.;Wang Y.Y.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
21.Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System Applications

机译：3.1-10.6 GHz UWB系统应用中硅上射频电感器中温度和基片效应的宽带建模
- 作者：Yo-Sheng Lin;Hsiao-Bin Liang;Hung-Wei Chiu;Liu K.;Hsin-Hong Wu;Shey-Shi Lu;Mou-Shiung Lin
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
- Inductor;
- Wideband Modeling;
- temperature;
- Inductor;
- Wideband Modeling;
- temperature;
22.Advanced Germanium MOS Devices and Technology

机译：先进的锗MOS器件和技术
- 作者：Chi On Chui;Saraswat K.C.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
23.ESD Protection Design for Mixed-Voltage I/O Interfaces -- Overview

机译：混合电压I / O接口的ESD保护设计-概述
- 作者：Ming-Dou Ker;Kun-Hsien Lin
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
24.Lanthanum Oxide for Gate Dielectric Insulator

机译：栅绝缘子用氧化镧
- 作者：Kakushima K.;Tsutsui K.;Hattori T.;Iwai H.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
25.Low-voltage embedded RAMs in the nanometer era

机译：纳米时代的低压嵌入式RAM
- 作者：Kawahara T.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
26.Nanoanalytical Characterization of Breakdown Spots in Ultrathin Gate Dielectrics

机译：超薄栅介质中击穿点的纳米分析表征
- 作者：Pey K.L.;Tung C.H.;Lo V.L.;Ranjan R.;Ang D.S.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
27.Nondestructive Depth Profiling of Gate Insulators by Angle-Resolved Photoelectron Spectroscopy

机译：角度分辨光电子能谱对栅绝缘子的无损深度分析
- 作者：Nohira H.;Shinagawa S.;Kase M.;Maruizumi T.;Hattori T.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
28.Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

机译：新型本地化SOI MOSFET结合了SOI和块状衬底的优势，可用于大规模器件
- 作者：Ru Huang;Yu Tian;Han Xiao;Weihai Bu;Chuguang Feng;Mansun Chan;Xing Zhang;Yangyuan Wang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
29.Technology Platform Based On Comprehensive Device Modeling For RF SoC Design

机译：基于全面器件建模的技术平台用于RF SoC设计
- 作者：Yuhua Cheng
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
30.Ultra-Low Voltage Analog Design Techniques for Nanoscale CMOS Technologies

机译：纳米CMOS技术的超低压模拟设计技术
- 作者：Kinget P.;Chatterjee S.;Tsividis Y.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》 | 2005年
31.Design ofA 16-bit Stereo Audio ΣΔA/D Converter

机译：16位立体声音频ΣΔA/ D转换器的设计
- 作者：Chen Lei;Zhao Yuanfu;Gao Deyuan;Wen Wu;Wang Zongmin;Zhu Xiaofei;Peng Heping
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
32.On-Chip Built-In Self-Test of Video-Rate ADCs Using a 1.5 V CMOS Gaussian Noise Generator

机译：使用1.5 V CMOS高斯噪声发生器的视频速率ADC的片内内置自测
- 作者：Evans G.;Goes J.;Paulino N.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
33.A MOS Transistor with Source/Drain on Insulator and Channel Doped in Step-Function Profile

机译：具有绝缘体上的源极/漏极和阶跃功能曲线中掺杂通道的MOS晶体管
- 作者：Dingyu Li;Wei Ke;Lei Sun;Xiaoyan Liu;Ruqi Han;Shengdong Zhang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
34.A Low-Energy Asynchronous FFT/IFFT Processor for Hearing Aid Applications

机译：用于助听器的低能耗异步FFT / IFFT处理器
- 作者：Kwen-Siong Chong;Gwee B.-H.;Chang J.S.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
35.Optimization of p-MOSFETs Featuring Uniaxial Stress Induced by Si1-χGeχSource/Drain and SDE

机译：Si 1-χ Ge χ源极/漏极和SDE引起的具有单轴应力的p-MOSFET的优化
- 作者：Jiahui Yuan;Guangping Zhu;Jinpeng Wang;Jianping Zou;Lilin Tian
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
36.Design for Manufacturability of Sub-100 Nanometer Standard Cells

机译：100纳米以下标准电池的可制造性设计
- 作者：Ji Xuemei;Zhang Peiyong;Shi Zheng;Yan Xiaolang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
37.Charge Collection in Impact Ionization MOS Transistors

机译：碰撞电离MOS晶体管中的电荷收集
- 作者：Wang W.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
38.Trap-Related Current Collapse Effects in GaN HEMTs

机译：GaN HEMT中与陷阱相关的电流塌陷效应
- 作者：Ma L.;Wang Y.;Guo T.Y.;Lu J.;Hao Z.B.;Luo Y.;Yu Z.P.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
39.A Low Power, High SFDR, ROM-Less Direct Digital Frequency Synthesizer

机译：低功耗，高SFDR，无ROM的直接数字频率合成器
- 作者：Jafari H.;Ayatollahi A.;Mirzakuchaki S.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
- Direct digital frequency synthesizer (DDFS);
- ROM-Less;
- frequency synthesizer;
40.Gate Leakage Properties of MOS Devices with Tri-Layer High-k Gate Dielectric

机译：具有三层高k栅极电介质的MOS器件的栅极泄漏特性
- 作者：Chen W.B.;Xu J.P.;Lai P.T.;Li Y.P.;Xu S.G.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
41.Extraction of Early Voltage and Thermal Resistance in InP/InGaAs HBTs

机译：InP / InGaAs HBT中早期电压和热阻的提取
- 作者：Yang-Hua Chang;Zhi-Juan Chang;Hui-Feng Hsu
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
42.An analytical model for organic thin film transistors

机译：有机薄膜晶体管的分析模型
- 作者：Ling Li;Kosina H.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
43.An Analytic Theory of Dielectric and Optic Nonlinear Effects of Ferroelectrics

机译：铁电体介电和光学非线性效应的解析理论
- 作者：Chuanren Yang;Wenjian Leng;Chunlin Fu;Hongwei Chen;Liye Hu;Jihua Zhang;Jiaxuan Liao
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
- Ferroelectric;
- Nonlinearity;
- Theory;
- Thin film;
44.Author Index

机译：作者索引
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
45.Simulation of A Monolithically Integrated CMOS Bioamplifier for EEG Recordings

机译：用于EEG记录的单片集成CMOS生物放大器的仿真
- 作者：Sui Xiaohong;Liu Jinbin;Gu Ming;Pei Weihua;Chen Hongda
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
46.A Leakage Power Estimation Method for Standard Cell Based Design

机译：基于标准单元设计的泄漏功率估计方法
- 作者：Xiaoying Zhao;Kui Wang;Xu Cheng;Dong Tong
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
47.Low Power Design of Column Readout Stage for 320x288 Snapshot Infrared ROIC

机译：320x288快照红外ROIC的列读出级的低功耗设计
- 作者：Liu Dan;Tang Ju;Lu Wengao;Chen Zhongjian;Zhao Baoying;Ji Lijiu
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
48.High Speed Low Power CMOS Comparator Dedicated to 10it, 20MHz Pipeline ADCs for RF Applications

机译：高速，低功耗，CMOS比较器，专用于10it，20MHz流水线ADC，适用于RF应用
- 作者：Guermaz M.B.;Bouzerara L.;Slimane A.;Belaroussi M.T.;Lehouidj B.;Zirmi R.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
49.Performance of Channel Engineered SDODEL MOSFET for Mixed Signal Applications

机译：通道工程SDODEL MOSFET在混合信号应用中的性能
- 作者：Sarkar P.;Mallik A.;Sarkar C.K.;Rao V.R.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
50.Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors

机译：栅极绝缘子氮化气体对MISiC肖特基二极管氢传感器的影响
- 作者：Tang W.M.;Leung C.H.;Lai P.T.;Xu J.P.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
51.A Novel Capacitive Sensing Scheme for Fingerprint Acquisition

机译：一种新型的指纹采集电容感应方案
- 作者：Meng-Lieh Sheu;Chih-Kuan Lai;Wei-Hung Hsu;Hong-Ming Yang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
52.A 0.25μm CMOS Low Power RF Multiplier for Ultra-wide Band System Applications

机译：适用于超宽带系统应用的0.25μmCMOS低功耗RF乘法器
- 作者：Tian Tong;Chih-An Lin;Jensen O.K.;Mikkelsen J.H.;Larsen T.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
53.Realization of Space Vector Modulation Technique in a Single FPGA Chip for Induction Motor Drive

机译：用于异步电动机驱动的单个FPGA芯片中空间矢量调制技术的实现
- 作者：Hew W.P.;Ooi C.P.;Rahim N.A.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
54.A Fast-settling Temperature-Insensitive Voltage Buffer

机译：快速建立对温度不敏感的电压缓冲器
- 作者：Zhang Yacong;Chen Zhongjian;Lu Wengao;Gao Jun;Ji Lijiu;Zhao Baoying
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
55.A TDI CMOS Readout Circuit for IRFPA with Linearity Improvement

机译：具有线性改进功能的用于IRFPA的TDI CMOS读出电路
- 作者：Zhang Yacong;Liu Dan;Lu Wengao;Chen Zhongjian;Ji Lijiu;Zhao Baoying
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
56.InA1As/InGaAs Metamorphic High Electron Mobility Transistor with a Liquid Phase Oxidized InA1As as Gate Dielectric

机译：液相氧化的InA1As作为栅介质的InA1As / InGaAs变质高电子迁移率晶体管
- 作者：Kai-Lin Lee;Kuan-Wei Lee;Men-Hsi Tsai;Po-Wen Sze;Mau-Phon Houng;Yeong-Her Wang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
57.A CMOS Readout Circuit for LTPS-TFT Capacitive Fingerprint Sensor

机译：用于LTPS-TFT电容式指纹传感器的CMOS读出电路
- 作者：Yu-Sheng Tiao;Meng-Lieh Sheu;Shi-Min Wu;Hong-Ming Yang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
58.A Differential Readout Circuit for Tin Oxide Gas Sensor Array

机译：氧化锡气体传感器阵列的差分读出电路
- 作者：Guo B.;Bermak A.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
59.A Noise Immunity Effective Read-Out Architecture for Uncooled Infrared Detector

机译：非制冷红外探测器的抗噪能力有效的读出架构
- 作者：Sang Joon Hwang;Seung Woo Hong;Sang Won Park;Jee Young Yoon;Man Young Sung
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
- Integrator;
- Read-out IC;
- Uncooled Infrared Bolometer Sensor;
60.A Simple Scheme of Current Amplification for Sensor Applications

机译：传感器应用中电流放大的简单方案
- 作者：Chunyan Wang
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
61.A CMOS-based Algorithmic ADC

机译：基于CMOS的算法ADC
- 作者：Arayawat S.;Chaikla A.;Petcmaneelumka W.;Riewruja V.;Julsereewong P.;Trisuwannawat T.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
62.Low-Power and Hardware Efficient Decimation Filters in Sigma-Delta A/D Converters

机译：Sigma-Delta A / D转换器中的低功耗和硬件高效抽取滤波器
- 作者：Hengfang Zhu;Xiaobo Wu;Xiaolang Yan
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
63.Low-Power CMOS Folding and Interpolating ADC with a Serial-Parallel Domino Encoder

机译：具有串行并行Domino编码器的低功耗CMOS折叠和内插ADC
- 作者：Zhen Liu;Song Jia;Zhongjian Chen;Xing Zhang;Lijiu Ji
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
64.A Standard CMOS Compatible Monolithic Photo-Detector and Trans-impedance Amplifier

机译：标准CMOS兼容的单片光电检测器和跨阻放大器
- 作者：Hongda Chen;Ming Gu;Jiale Huang;Peng Gao;Luhong Mao
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
65.A mechanism of increase in the on-current and offcurrent due to a slightly smaller spacer in state-of- the-art p-channel MOS transistors during manufacturing

机译：在制造过程中，由于最新的p沟道MOS晶体管中的间隔物稍小，导致导通电流和截止电流增加的机制
- 作者：Lau W.S.;Eng C.W.;Tee K.M.;Siah S.Y.;Vigar D.;Kim Y.T.;Lal M.;Bhat M.;Chan L.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
66.Normally-Off GaN n-MOSFET with Schottky-Barrier Source and Drain on a p-GaN on Silicon Substrate.

机译：在硅衬底上的p-GaN上具有肖特基势垒源极和漏极的常关GaN n-MOSFET。
- 作者：Heon-Bok Lee;Hyun-Ick Cho;Kyong-Hum Back;Hyun-Su An;Jung-Hee Lee;Sung-Ho Hahm
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
67.Monitoring of Switching Activity and Transition Times of Clock Signals in SoC Cells by Estimation of the Mean Value of IDD Current

机译：通过估计IDD电流的平均值来监视SoC单元中时钟信号的开关活动和转换时间
- 作者：Dziurdzia P.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
68.Thickness Dependences of Phase Change and Channel Current Control in Phase-Change Channel Transistor

机译：相变沟道晶体管中相变的厚度依赖性和沟道电流控制
- 作者：Yin Y.;Miyachi A.;Niida D.;Sone H.;Hosaka S.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
69.Sub-50-nm Asymmetric Graded Low Doped Drain (AGLDD) Vertical Channel nMOSFET

机译：低于50nm的不对称渐变低掺杂漏极（AGLDD）垂直通道nMOSFET
- 作者：Zhou F.L.;Huang R.;An X.;Guo A.;Xu X.Y.;Zhang X.;Zhang D.C.;Wang Y.Y.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
70.Two dimensional phase sensitive surface plasmon resonance biosensor array using microfluidic flow circuit platform

机译：使用微流电路平台的二维相敏表面等离子体共振生物传感器阵列
- 作者：Chi Lok Wong;Ho Pui Ho;Kin Fong Lei;Wen Jung Li;Kwok Sum Chan;Wing Cheung Law;Shu Yuen Wu;Siu Kai Kong;Chinlon Lin
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
71.Design and Implementation of Digital Up Converter for Homenet

机译：家庭网数字上变频器的设计与实现
- 作者：Xiaoxin Cui;Dunshan Yu;Shimin Sheng;Xiaole Cui
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
72.Bus-based IP Reusable Verification Platform

机译：基于总线的IP可重用验证平台
- 作者：Wenfa Zhan;Rui Wang;Duoli Zhang;Bing Lu
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
73.Analysis of GIDL Dependence on STI-induced Mechanical Stress

机译：GIDL对STI引起的机械应力的依赖性分析
- 作者：Wenwei Yang;Guoxuan Qin;Xue Shao;Zhiping Yu;Lilin Tian
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
- GIDL;
- STI;
- mechanical stress;
74.Numerical Simulation of AlXGa1-XN/AlN/GaN HEMT

机译：Al X Ga 1-X N / AlN / GaN HEMT的数值模拟
- 作者：Lijun Xue;Yan Wang;Ming Liu;Changqing Xie;Chengzhan Li;Zhijing He;Yang Xia
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
- AlGaN/AlN/GaN;
- HEMT;
- Simulation;
75.Enhanced Mobility for Pentacene TFT Built on NH3- Annealed Thermally Grown SiO2

机译：基于NH 3 -退火热生长SiO 2 的并五苯TFT的增强迁移率
- 作者：Kwan M.C.;Cheng K.K.H.;Lai P.T.;Che C.M.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
76.Fabrication and Electrical Characteristics of AgTCNQ Crossbar Switches for Organic Molecular Memories and Logics

机译：用于有机分子存储器和逻辑学的AgTCNQ交叉开关的制造和电特性
- 作者：Tu D.Y.;Wang C.S.;Ji Z.Y.;Hu W.P.;Liu M.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
77.Area Efficient Low-Power Static Explicit-Pulsed Flip-Flop with Local Feedback

机译：具有局部反馈的高效区域低功耗静态显式触发器
- 作者：Yeo K.S.;Goh W.L.;Phyu M.W.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
78.Power Modeling for CMOS Circuits by RBF Network

机译：通过RBF网络对CMOS电路进行功率建模
- 作者：Qiang W.;Cao Y.;Yan Y.;Gao X.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
79.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
80.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
81.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
82.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
83.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
84.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
85.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
86.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
87.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
88.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
89.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
90.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
91.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
92.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
93.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
94.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
95.Opportunities and Challenges of Emerging Nanotechnologies for Future High-Speed and Low-Power Logic Applications

机译：新兴纳米技术在未来高速和低功耗逻辑应用中的机遇与挑战
- 作者：Chau R.
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
96.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
97.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
98.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
99.Breaker pages

机译：断路器页面
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》
100.2005 IEEE Conference on Electron Devices and Solid-State Circuits

机译：2005 IEEE电子设备和固态电路会议
- 会议名称：《Electron Devices and Solid-State Circuits, 2005 IEEE Conference on》