Normally-Off GaN n-MOSFET with Schottky-Barrier Source and Drain on a p-GaN on Silicon Substrate.

摘要

We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO2was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at VDS=5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3x10-9A/mm.