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Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application

机译：用多指架构调制对高功率应用的自终止蚀刻技术常关P-GAN / ALGAN / GAN HEMT的研究

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期刊名称 Micromachines
作者
Ya-Chun Chang; Yu-Li Ho; Tz-Yan Huang; Ding-Wei Huang; Chao-Hsin Wu;
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年(卷),期 2021(12),4
年度 2021
页码 432
总页数 9
原文格式 PDF
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关键词

机译：氮化镓（GaN）;增强模式;P-GaN HEMT;多指布局;自终止蚀刻;
入库时间 2022-08-21 12:27:13

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专利

1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi, Denggui Wang, Jianjun Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications [J] . Fleury Clement, Capriotti Mattia, Rigato Matteo, Microelectronics & Reliability . 2015,第9a10期

机译：用于功率应用的SiC和Si衬底上常关p-GaN栅极AlGaN / GaN HEMT的高温性能
3. Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs [J] . Jingqian Liu, Jinyan Wang, Zhe Xu, Electronics Letters . 2014,第25期

机译：AlGaN / GaN常关型MOSFET自终止栅极凹槽湿法刻蚀工艺中的氧化工艺研究
4. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching [J] . Son Dong-Hyeok, Jo Young-Woo, Won Chul-Ho, Solid-State Electronics . 2018,第MARa期

机译：具有自终止TMAH湿式凹槽蚀刻功能的常关AlGaN / GaN基MOS-HEMT
5. Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications [C] . Tapajna M., Valik L., Kotara P., International Conference on Advanced Semiconductor Devices and Microsystems . 2014

机译：缓冲结构对功率开关应用中常关型p-GaN / AlGaN / GaN HEMT的俘获特性的影响
6. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
7. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
8. Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region [O] . Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, 2020

机译：常关P-GaN门控AlGaN / GaN Hemts使用等离子体氧化技术在接入区域中

Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application

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