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Nondestructive Depth Profiling of Gate Insulators by Angle-Resolved Photoelectron Spectroscopy

机译:角度分辨光电子能谱对栅绝缘子的无损深度分析

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Our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The depth profiles of composition and chemical bonding configuration of nitrogen atoms were determined by applying maximum entropy concept to the angle-resolved photoelectron spectroscopy.
机译:综述了我们对氧氮化膜的组成和化学结构的详细研究。氧氮化物/ Si界面的结构由氮原子和通过X射线光电子能谱法检测到的硅原子的最邻近原子确定。通过将最大熵概念应用于角度分辨光电子能谱,确定了氮原子的组成和化学键构型的深度分布。

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