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Nondestructive Depth Profiling of Gate Insulators by Angle-Resolved Photoelectron Spectroscopy

机译:角度分辨光电子谱的闸阀绝缘子无损深度分析

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Our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The depth profiles of composition and chemical bonding configuration of nitrogen atoms were determined by applying maximum entropy concept to the angle-resolved photoelectron spectroscopy.
机译:我们对氮酰胺膜的组成和化学结构进行了详细研究。氧氮化物/ Si界面的结构由氮原子的最近邻居和由X射线光电子光谱检测的硅原子的结构确定。通过将最大熵概念施加到角度分辨的光电子能谱来确定氮原子的组成和化学键合构成的深度谱。

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