Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications

摘要

In this paper, the authors propose novel metal–oxide–semiconductor field-effect transistor (MOSFET) types featuring additional L-shaped counterdoped areas in the source and/or drain regions of silicon-on-insulator (SOI) MOSFETs to reduce drain-induced barrier lowering (DIBL) through the buried oxide (BOX) layer. The L-shaped region in the drain area shields the BOX layer from penetration by the drain electric field, thereby reducing DIBL in the body region. Simulation of the electrical characteristics of these novel MOSFETs demonstrated more remarkable DIBL suppression and subthreshold slope performance in short-channel regions than in conventional SOI MOSFETs. In addition to this suppression, these novel MOSFETs suppress breakdown voltage more effectively than conventional SOI MOSFETs. The authors concluded that the proposed devices are capable of contributing to the scaling of SOI MOSFETs in ultralarge-scale integration circuits.