Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AIGaN-GaN MOSFETs

摘要

We investigated drain-induced barrier lowering (DIBL) in normally-off AlGaN-GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with a double-recess overlapped gate structure. It is found that the double-recess overlapped gate structure can suppress DIBL; the threshold voltage is constant without lowering for high drain-source voltages, and sub-threshold characteristics remains excellent. We elucidate the mechanism of the DIBL suppression by considering a local potential in the MOSFETs. In addition, it is also found that the double-recess overlapped gate structure is beneficial for current collapse suppression. Published by AIP Publishing.