MIS结构降低源漏极接触电阻的研究进展

摘要

A novel method reducing MIS contact resistance in MOSFET is introduced, which reduces the contact resistance by inserting a thin dielectric layer between metal and semiconductor to form metal-interfacial layer-semiconductor (MIS). The development of process for contact resistance reduction is briefly reviewed. The basic physics models and the methods of simulation and calculation are reviewed; the experimental research progress is summarized. Advantages and drawbacks of MIS are discussed. And ends with an outlook in the future direction of MIS is forecasted.%介绍了降低金属氧化物半导体场效应晶体管中金属/半导体接触电阻的一种新型的方法，在金属与半导体之间插入一层薄的电介质形成金属-界面层-半导体(metal-interfacial layer-semiconductor, MIS)结构以降低金属/半导体接触电阻。回顾了降低接触电阻的工艺发展历程与趋势，综述了MIS结构的基础物理模型与计算模拟的方法，总结了MIS结构实验研究的最新进展，讨论了MIS结构的局限性与不足之处，并展望了MIS结构在未来的发展方向。