Three-Dimensional Modelling for Contact Resistance of Current Flow into a Source/Drain Region

摘要

Various extensions of the transmission line model are introduced to find the resistance for current flow in MOSFET source/drain regions. The geometry is taken to be a rectangular box with a rectangular contact on the upper surface. Explicit formulas are derived by assuming that the current flow is restricted to various geometrical planes. Comparison of basic results with simulation and experimental data is good. Comparison with simulation results for misalignment was not as good. (mjm)