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Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering
Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering
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机译:绝缘体上硅结构和减少背面漏极引起的势垒降低的方法
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摘要
The invention relates to a transistor that includes a semiconductive layer on an insulator layer. Below the insulator layer is a substrate and a contact is disposed in the insulator layer that originates at the substrate and terminates in the insulator layer. The contact is aligned below the transistor junction. The invention also relates to a process flow that is used to fabricate the transistor. The process flow includes forming the contact by either a spacer etch or a directional, angular etch.
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