High-Performance Metal-Induced Laterally Crystallized Polycrystalline Silicon P-Channel Thin-Film Transistor With $hbox{TaN/HfO}_{2}$ Gate Stack Structure

摘要

In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral-crystallization (MILC) channel layer and $hbox{TaN/HfO}_{2}$ gate stack is demonstrated for the first time. The devices of low threshold voltage $V_{rm TH}sim hbox{0.095} hbox{V}$ , excellent subthreshold swing S.S. $sim!hbox{83} hbox{mV/dec.}$, and high field-effect mobility $mu_{rm FE}simbreak hbox{240} hbox{cm}^{2}/hbox{V} cdot hbox{s}$ are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by $hbox{HfO}_{2}$ gate dielectric with the effective oxide thickness of 5.12 nm.