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Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
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机译:金属诱导的非晶硅结晶,由此产生的多晶硅薄膜以及由此产生的薄膜晶体管
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摘要
Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.
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