全耗尽SOI MOSFET亚阈值表面势的二维半解析模型

摘要

根据SOI MOSFET的工作原理,在SOI MOSFET的氧化层、耗尽层和埋氧化层分别引入矩形等效源,提出了电势二维分布的定解问题.再通过半解析法、傅里叶级数展开法和积分法相结合对每个区域的定解问题进行求解,得到了定解问题的二维半解析解,解得结果是无穷级数形式的特殊函数.计算和仿真结果表明,提出的模型求解时精度高,运算量较小,可用于的电路模拟程序.%Based on the principle of the SOI MOSFT,a definite solution of potential is proposed by introducing three rectangular sources in the oxide layer,depletion layer and buried oxide layer.The potential distribution of the three region has been obtained by means of the variables separation method,Fourier expansion method and the integral method.The solution is a special function of the infinite series expressions.The simulation results show that the proposed semi-analytical model has high precision and smaller calculation and can be applied to circuit simulation programs.