The origin of cublic polytype inclusions in CVD-grown epiaxial layers of silicon carbide

摘要

TShe structure and formation mechanisms of coubic polytpe inclusions in CVD-grown epitaxial layers of silicon carbide are investigated using polytpe revealind techniques and transmission electron microscopy. The inclusions originate from triangular stacking faults, the structural defects induced by substrate imperfections. The stacking fault formation results in a modifcation of surface morphology, in formation of a large on-axis terrace. A high local supersaturation at those teraces induces spontaneous 2-dimensional nucleation of cubic SiC.