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PROCESS FOR THE CONTROLLED GROWTH OF SINGLE-CRYSTAL FILMS OF SILICON CARBIDE POLYTYPES ON SILICON CARBIDE WAFERS
PROCESS FOR THE CONTROLLED GROWTH OF SINGLE-CRYSTAL FILMS OF SILICON CARBIDE POLYTYPES ON SILICON CARBIDE WAFERS
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机译:碳化硅晶片上单晶硅多晶型的可控生长过程
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摘要
This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.
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