Analysis of non-stationary transport and quantum effects in realistic 0.1μm partially-depleted SOI technology

摘要

This paper emphasizes the impact of non-stationary transport and quantum effects on performances of deep submicron SOI partially-depleted technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling. The results are applied to realistic devices, showing which electrical features have to be taken into account for evaluating the performances of advanced device architectures (down to 0.lμm gate length). We show, for the first time, how technological parameters like channel and LDD doping impact the injection velocity and drain current. We conclude that specific engineering of access region have to be envisaged for taking full advantage of non-stationary effects on nowadays device performances.