A method of characterizing transistors for attenuating the effects of irradiation on an integrated circuit manufactured in SOI technology.

摘要

A method of characterizing SOI transistors intended to determine at least a pair of an electrical voltage and a temperature to be applied to attenuate the effects of radiation on the transistors; the method comprising the steps: measuring an initial characteristic curve (Id - Vg) 0 of the operation of the transistor, exposing the sample to radiation to reach a predetermined absorbed dose, for each electric voltage value taken from among a plurality of values, applying the electric voltage value (Vbg) i and repeat the first step to obtain a new characteristic curve, heat the sample to a heating temperature for a determined period, repeat the measurement and heating steps by varying the heating temperature by increasing values, compare at least one new curve obtained with the initial curve to determine at least one pair of temperature and voltage values (Topt, Vbg_opt) n complying with a variation criterion. Figure for the abstract: Fig. 4