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微电子制造学报

微电子制造学报

Journal of Microelectronic Manufacturing (JoMM）是由中国科学院微电子研究所、国科大微电子学院联合创办的国际全英文学术期刊，旨在发表集成电路制造领域中从基础研究阶段到工业大规模量产阶段的研究成果，内容包括但不限于Design、Process、Metrology & Yield Control、Packaging、Materials、Equipment 等方面。
  • 发文量：47
  • 被引量：0
  • H指数：0
  • 开始收录时间：2018,1(1)
  • CNKI综合因子：0.0
  • 维普期刊影响因子： 0.02
  • 万方期刊影响因子：0.0
  • 创刊时间：2018
  • 国内刊号/CN：-
    国际刊号/ISSN：2578-3769
  • 发行周期：季刊
    邮发代号：-
  • 主管单位：中国科学院
    主办单位：中国科学院微电子研究所
微电子制造学报-联系信息
  • 主编：叶天春
  • 电话：010-82995779
  • 邮箱：jomm@jommpublish.org
  • 地址：北京市北土城西路3号中科院微电子研究所
  • 邮编：100029
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微电子制造学报 >2021年第4期

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  • 摘要：An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.
  • 摘要：Decades of progress in the semiconductor industry has led to lithographically printed dimensions that are small enough that the positions of individual molecules and the stochastic variation in the number of photons have a significant effect on the quality of photoresist patterns.These effects scale badly and will be more important as feature sizes continue to shrink.Selforganizing materials can provide regular patterns of molecules that have the potential to minimize stochastic effects.Some such reported materials are block copolymers,bottle brush polymers and DNA,all of which have been used as part of lithographic patterning.A key challenge for selforganizing materials is defect levels.The energy to rearrange has to be high enough that random defects aren’t created thermally but low enough that rearrangement into preferred domains can occur.All of the methods can generate accurate CDs based on the chemical composition of the material,but they all need some way to control the positions of the feature edges.There are methods for guiding the self-organization,but the final position is the sum of the guide pattern misalignment and the intrinsic alignment error of the self-organizing materials.Thus it can be worse than the positioning of the guide structures.Alignment and defect levels are thus two big challenges for manufacturing introduction of self-organizing materials.
  • 摘要：Editorial Introduction:China''s IC industry has been flourishing in recent years,huge market demand together with government investments are the major driving forces for this development.The status and development momentum of the Chinese IC industry also attracted wide interest and attention of international counterparts.A group of domestic IC experts are invited by the JoMM to write a series of articles about China''s IC industry,including the history,current status,development,and related government policies.Information i n these articles is all from public data from recent years.The purpose of these articles is to enhance mutual understanding between the Chinese domestic IC industry and international IC ecosystem.
  • 摘要：China's IC industry has been flourishing in recent years,huge market demand together with government investments are the major driving forces for this development.The status and development momentum of the Chinese IC industry also attracted wide interest and attention of international counterparts.A group of domestic IC experts are invited by the JoMM to write a series of articles about China's IC industry,including the history,current status,development,and related government policies.Information i n these articles is all from public data from recent years.The purpose of these articles is to enhance mutual understanding between the Chinese domestic IC industry and international IC ecosystem.
  • 摘要：This paper presents an innovative R2R(run to run)control strategy.This novel approach has made use of circuit design structure through virtually put up the structure before reach the actual structure developing step.The most significant difference between this approach and other R2R control strategies is this approach can solve issues caused by limitation of metrology instrument such as measuring target is inside a deep hole and cannot be measured clearly.Furthermore,the study proposed a multi-steps rolling wave control plan to safeguard the outcome of this control strategy.Although this control strategy has only performed trials on DRAM(Dynamic Random Access Memory)manufacturing process but it can be applied to other industry as well.
  • 摘要：A reflective faceted structure is proposed to reshaping an incoherent light beam into two focalized spots-To obtain the desired irradiance distribution on a detector,custom optimization function is written,and the two dimensional tilt angles of each facet are optimized automatically in a pure non-sequential mode in Zemax OpticStudio 16.The result is also confirmed inside LightTools&2 from Synopsys.For measuring the quality of the optimization result in the case of two spots focalization,four factors including efficiency on the detector,uniformity,the root mean square error and the correlation coefficient are calculated.These four factors are used to evaluate the influence of several parameters on the irradiance distribution.These parameters include the incidence angle,the divergence angle,the facet size,the source type and the resolution of the facet angular positions.Finally,an analysis of those parameters is made and the performance of this type of component is demonstrated.

    微电子制造学报的期刊信息

    • 创刊时间：2018
    • 地区：CN
    • 语言：中文
    • 热门主题：LITHOGRAPHY INDUSTRY EUV IN_CHINA NAND MASK SEMICONDUCTOR METROLOGY MANUFACTURING IC
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    • 通讯地址：北京市北土城西路3号中科院微电子研究所
    • 邮编：100029
    • 联系电话：010-82995779
    • 邮箱：jomm@jommpublish.org
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