Transport Properties And Observation Of Quantum Hall Effects Of Inas_(0.1)sb_(0.9) Thin Layers Sandwiched Between Al_(0.1)in_(0.9)sb Layers

摘要

InAs_(0.1)Sb_(0.9) active layers sandwiched between Al_(0.1)In_(0.9)Sb insulating buffer layers were grown on GaAs (100) substrates by molecular beam epitaxy. The basic transport properties at room temperature and quantum Hall effects at low temperature of the InAs_(0.1)Sb_(0.9) were studied as a function of InAs_(0.1)Sb_(0.9) thickness. The electron mobility of the InAs_(0.1)Sb_(0.9) active layers had a very high value and very small thickness dependence at less than 500 nm. The quantum Hall effects of the InAs_(0.1)Sb_(0.9) were observed at thicknesses 15, 20, 30, 50, 70, and 100 nm. The observation of the quantum Hall effect at thickness more than 50 nm strongly suggests the existence of two-dimensional electron gas in the InAs_(0.1)Sb_(0.9) layer sandwiched between Al_(0.1)In_(0.9)Sb layers.