RECENT DEVELOPMENTS IN N_2O/NO-BASED ULTRA THIN OXYNITRIDE GATE DIELECTRICS FOR CMOS ULSI APPLICATIONS

摘要

This paper reviews recent developments in N_2O- and NO-based oxynitride gate dielectrics for CMOS ULSI applications. These dielectrics are extremely attractive due to their process simplicity, thickness controllability, and excellent electrical characteristics. In this paper, several issues like thickness scaling, growth kinetics, chemical composition, electrical properties, hot-carrier reliability, and EEPROM applications of these dielectrics are discussed.