Extremely low-threshold continue-wave operation of InGaAs quantum-well lasers with an AlAs native-oxide layer grown by MOCVD

摘要

Threshold current as low as 12.8 mA for InGaAs quantum-well lasers grown by MOCVD have been demonstrated by a laterally oxidized technique. This value is relatively low for a wider active region (cavity length is 50 mum, stripe width is 14 mum) compare to