Low-threshold mesa-etched vertical-cavity InGaAs/GaAs surface-emitting lasers grown by MOCVD

摘要

The authors have demonstrated a low threshold current of 0.33 mA and a threshold current density of 380 A/cm/sup 2/ for MOCVD-grown InGaAs/GaAs vertical-cavity surface-emitting lasers with a pillar etched structure. The thermal characteristic of the fabricated device including thermal resistance and junction temperature rise is also discussed. Judging from this experiment, further reduction of threshold current can be expected by reducing nonradiative recombination and electrical resistance.