Low-Threshold and High-Power Oxide-Confined 850 nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure

CHEN Min; GUO Xia; DENG Jun; GAI Hong-Xing; DONG Li-Min; QU Hong-Wei; GUAN Bao-Lu; GAO Guo; SHEN Guang-Di

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Low-Threshold and High-Power Oxide-Confined 850 nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure

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@@ The low-threshold and high-power oxide-confined 850 nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting lasers (VCSELs) based on the intra-cavity contacted structure are fabricated. The threshold current of 0.1 mA for a 10-μm oxide-aperture device is obtained with the threshold current density of 0. 127kA/cm2.For a 22-μm oxide-aperture device, the peak optical output power reaches to 14.6mW at the current injection of 25mA under the room temperatureand pulsed operation with a threshold current of 2mA, which corresponds to the threshold current density of 0.526kA/cm2. The lasing wavelength is 855.4nm. The full wave at half maximum is 2.2nm. The analysis of the characteristics and the fabrication of VCSELs are also described.

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《中国物理快报：英文版》 |2005年第12期|3074-3076|共3页
作者
CHEN Min; GUO Xia; DENG Jun; GAI Hong-Xing; DONG Li-Min; QU Hong-Wei; GUAN Bao-Lu; GAO Guo; SHEN Guang-Di;
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Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022;

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Low-Threshold and High-Power Oxide-Confined 850 nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure

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