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Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件

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作者
Frateschi, Newton Cesario;
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作者单位

University of Southern California;

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授予单位 University of Southern California;
学科
学位 Ph.D.
年度 1993
页码 166 p.
总页数 166
原文格式 PDF
正文语种 eng
中图分类
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入库时间 2022-08-17 11:59:26

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专利

1. Three-terminal bistable low-threshold strained InGaAs/GaAs laser grown on structured substrates for digital modulation [J] . Frateschi N.C., Zhao H. IEEE Photonics Technology Letters . 1993,第3期

机译：在结构化基板上生长的三端双稳态低阈值应变InGaAs / GaAs激光器，用于数字调制
2. Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates [J] . Sale T.E., Roberts J.S. IEEE Photonics Technology Letters . 1996,第8期

机译：在（211）B取向GaAs衬底上生长的低阈值压电应变InGaAs-GaAs QW激光器
3. High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures [J] . Sin Y.K., Horikawa H. Electronics Letters . 1992,第8期

机译：高功率，单模InGaAs-GaAs-AlGaAs应变量子阱激光器，采用新的电流阻挡方案，使用MBE在低衬底温度下生长的GaAs层
4. Sub-mA threshold operation of λ=1.5 μm strained InGaAsmultiple quantum well lasers grown on (311)B InP substrates [C] . Thijs P.J.A., Binsma J.J.M., Tiemeijer L.F., Indium Phosphide and Related Materials, 1992., Fourth International Conference on . -1

机译：λ= 1.5μm应变InGaAs的亚mA阈值操作在（311）B InP衬底上生长的多量子阱激光器
5. Low-temperature-grown InGaAs quantum wells for optical device applications. [D] . Juodawlkis, Paul William. 1999

机译：用于光学器件应用的低温生长的InGaAs量子阱。
6. Dirac point induced ultralow-threshold laser and giant optoelectronic quantum oscillations in graphene-based heterojunctions [O] . Golam Haider, Rini Ravindranath, Tzu-Pei Chen, -1

机译：狄拉克点诱导的超低阈值激光和石墨烯异质结中的巨大光电量子振荡
7. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates [O] . Bhattacharya, Arnab, Mawst, Luke J., Nayak, Sabyasachi, 1996

机译：在Gaas衬底上通过金属有机化学气相沉积生长的InGaas / InGaasp / InGap量子阱激光二极管的界面结构
8. Low-Threshold InGaAs Strained-Layer Quantum-Well Lasers (Lambda=0.98 Micrometer)with GaInP Cladding Layers and Mass-Transported Buried Heterostructure [R] . Liau, Z. L., Palmateer, S. C., Groves, S. H., 1992

机译：具有GaInp包层和质量传输埋层异质结构的低阈值InGaas应变层量子阱激光器（λ= 0.98微米）

Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates

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