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Indium Phosphide and Related Materials, 1992., Fourth International Conference on

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1.Ultrafast carrier transport and capture in InGaAs/InPheterostructures

机译：InGaAs / InP中超快的载流子传输和捕获异质结构
- 作者：Kersting R.;Schwedler R.;Leo K.;Kurz H.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
2.Study of Schottky barrier formation in InP(110) by photoreflectance

机译：InP（110）中光反射形成肖特基势垒的研究
- 作者：Hwang J.S.;Hang Z.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
3.Defect behavior, carrier removal and predicted in-space injectionannealing of InP solar cells

机译：缺陷行为，载流子去除和预计的空间注入InP太阳能电池的退火
- 作者：Weinberg I.;Swartz C.K.;Drevinsky P.J.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
4.Development of 3-inch diameter InP single crystals with lowdislocation density using VCZ technique

机译：研制出3英寸直径低InP单晶使用VCZ技术的位错密度
- 作者：Hosokawa Y.;Kawarabayashi S.;Yabuhara Y.;Morioka M.;Yokogawa M.;Fujita K.;Akai S.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
5.In-plane quantum energy control of InGaAs/InGaAsP MQW structure byMOCVD selective area growth

机译：InGaAs / InGaAsP MQW结构的面内量子能控制MOCVD选择性区域生长
- 作者：Takahashi M.;Suzuki M.;Aoki M.;Uomi K.;Kawano T.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
6.Strained MQW DFB lasers for high speed digital and analogtransmission

机译：适用于高速数字和模拟的应变MQW DFB激光器传播
- 作者：Speier P.;Cebulla U.;Haisch H.;Mayer H.P.;Klenk M.;Laube G.;Bouayad J.;Weinmann R.;Zielinski E.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
7.High-gain InAlAs/InGaAs npn single heterojunction bipolartransistors grown by molecular beam epitaxy

机译：高增益InAlAs / InGaAs npn单异质结双极通过分子束外延生长的晶体管
- 作者：Lin H.-H.;Huang C.-H.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
8.Gas source molecular beam epitaxy of GaInAs and GaInAsP strainedlayer quantum well lasers emitting at 1.5 μm

机译：GaInAs和GaInAsP应变的气源分子束外延发射1.5μm的层量子阱激光器
- 作者：Starck C.;Emery J.-Y.;Simes R.J.;Pagnod-Rossiaux P.;Gaborit F.;Matabon M.;Pommereau F.;Goldstein L.;Barrau J.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
9.Analysis of InP/InGaAs single and double heterostructure bipolartransistors for simultaneous high speed and high breakdownoperation

机译：InP / InGaAs单和双异质结构双极分析同时高速和高击穿的晶体管操作
- 作者：Chau H.-F.;Pavlidis D.;Hu J.;Tomizawa K.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
10.High quality InGaAs/InP and InAlAs/InP heterostructures beyond theMatthews-Blakeslee critical layer thickness

机译：超越In的高质量InGaAs / InP和InAlAs / InP异质结构Matthews-Blakeslee临界层厚度
- 作者：Bennett B.R.;del Alamo J.A.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
11.Morphological defects in InP layers grown by gas-source molecularbeam epitaxy

机译：气源分子生长的InP层的形貌缺陷束外延
- 作者：Rakennus K.;Hakkarainen T.;Tappura K.;Asonen H.;Pessa M.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
12.Suppression of the kink effect in InGaAs/InAlAs HEMTs grown by MBEby optimizing the InAlAs buffer layer

机译：MBE生长的InGaAs / InAlAs HEMT中的扭结效应的抑制通过优化InAlAs缓冲层
- 作者：Georgakilas A.;Zekentes K.;Kornilios N.;Halkias G.;Dimoulas A.;Christou A.;Peiro F.;Cornet A.;Benyattou T.;Tabata A.;Guillot G.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
13.Status of the parasitic effects and reliability issues of InPelectron devices

机译：InP的寄生效应和可靠性问题的状况电子设备
- 作者：Dumas J.M.;Lecrosnier D.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
14.High-speed, low-threshold InGaAsP semi-insulating buried crescentlasers

机译：高速，低阈值InGaAsP半绝缘埋入月牙形雷射
- 作者：Mar A.;Bowers J.;Huang R.-T.;Wolf D.;Cheng W.-H.;Jiang C.-L.;Agarwal R.;Renner D.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
15.In situ characterization of remote plasma treated and passivatedInP by integral photoluminescence

机译：处理和钝化的远程等离子体的原位表征InP通过积分光致发光
- 作者：Kiel F.;Kulisch W.;Kassing R.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
16.High yield scalable dry etch process for indium basedheterojunction bipolar transistors

机译：铟基高产量可扩展干法蚀刻工艺异质结双极晶体管
- 作者：Fullowan T.R.;Pearton S.J.;Kopf R.F.;Ren F.;Lothian J.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
17.Defect density reduction of n+p and p+n InPstructures fabricated by closed ampoule thermal diffusion

机译：n + p和p + n InP的缺陷密度降低封闭安瓿热扩散法制成的结构
- 作者：Faur M.;Goradia C.;Ghalla M.;Weinberg I.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
18.In-situ photoluminescence surface state spectroscopy for InP andInGaAs

机译：InP和InP的原位光致发光表面状态光谱铟镓砷
- 作者：Hasegawa H.;Saitoh T.;Numata K.-i.;Sawada T.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
19.Complex Airy analysis of photoreflectance spectra for bulk In_xGa_1-xAs on InP and In_xGa_1-xAsHEMTs

机译：In _{x块的光反射光谱的复杂Airy分析InP和In _{x Ga _{1-x As上的 Ga _{1-x AsHEMT}}}}
- 作者：Estrera J.P.;Duncan W.M.;Kao Y.C.;Liu H.Y.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
20.Carbon doping of In_xGa_1-xAs by MOCVD usingCCl₄

机译：In _{x Ga _{1-x As的MOCVD碳掺杂CCl ₄}}
- 作者：Stockman S.A.;Hanson A.W.;Curtis A.P.;Stillman G.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
21.Monolithic integration of both GaInAs photodiodes and GaInAsPlasers with impedance matching circuits for 6 GHz transmissions

机译：GaInAs光电二极管和GaInAsP的单片集成具有阻抗匹配电路的激光器，用于6 GHz传输
- 作者：Renaud J.C.;Rondi D.;Hirtz P.;Blondeau R.;Maricot S.;Vilcot J.P.;Decoster D.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
22.Very low loss waveguides formed by fluorine induced disordering ofGaInAs/GaInAsP quantum wells

机译：由氟引起的无序形成的非常低损耗的波导GaInAs / GaInAsP量子阱
- 作者：Bradshaw S.A.;Marsh J.H.;Glew R.W.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
23.Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSMphotodetectors grown by LP MOVPE

机译：叉指电极和共面波导InAlAs / InGaAs MSMLP MOVPE生长的光电探测器
- 作者：Buchali F.;Gyuro I.;Scheffer F.;Prost W.;Block M.;Wendorff W.;Heymann G.;Tegude F.J.;Speier P.;Jager D.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
24.Fabrication technology for high performance 3-electrode quantumwell DFB lasers

机译：高性能三电极量子的制造技术DFB激光器
- 作者：Landgren G.;Nilsson S.;Wallin J.;Lourdudoss S.;Kjebon O.;Lindgren S.;Karlsson-Varga D.;Ohlander U.;Broberg B.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
25.Irradiation of monolithic InP/Ga_0.47In_0.53Astandem solar cells

机译：整体式InP / Ga _{0.47 In _{0.53 As的辐照串联太阳能电池}}
- 作者：Walters R.J.;Shaw G.J.;Summers G.P.;Wanlass M.W.;Ward J.S.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
26.Lattice matched In_0.52Al_0.48As window layersfor InP solar cells

机译：晶格匹配In _{0.52 Al _{0.48 作为窗口层用于InP太阳能电池}}
- 作者：Jain R.K.;Landis G.A.;Flood D.J.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
27.In situ selective area etching and MOVPE regrowth of GaInAs-InP onInP substrates

机译：GaInAs-InP的原位选择性区域刻蚀和MOVPE再生长。InP基板
- 作者：Henle B.;Rudeloff R.;Bolay H.;Scholz F.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
28.Electrical properties and origin of deep levels in undoped InAlAslayers grown by MOCVD

机译：非掺杂InAlAs的电学性质和深能级的起源通过MOCVD生长的层
- 作者：Naritsuka S.;Noda T.;Wagai A.;Fujita S.;Ashizawa Y.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
29.Sub-mA threshold operation of λ=1.5 μm strained InGaAsmultiple quantum well lasers grown on (311)B InP substrates

机译：λ= 1.5μm应变InGaAs的亚mA阈值操作在（311）B InP衬底上生长的多量子阱激光器
- 作者：Thijs P.J.A.;Binsma J.J.M.;Tiemeijer L.F.;Slootweg R.W.M.;van Roijen R.;van Dongen T.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
30.Modeling, design and performance of InP/InGaAsdouble-heterojunction bipolar transistors

机译：InP / InGaAs的建模，设计和性能双异质结双极晶体管
- 作者：Parrilla M.;Newson D.;Skellern D.;MacBean M.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》
31.Single step implant isolation of p+-InP using MeV ionbeams

机译：使用MeV离子单步植入p + -InP横梁
- 作者：Ridgway M.C.;Jagadish C.;Elliman R.G.;Hauser N.
- 会议名称：《Indium Phosphide and Related Materials, 1992., Fourth International Conference on》