Yellow-green epitaxial transparent substrate-LEDs and lasers based on a strained-ingap quantum well grown on an indirect bandgap substrate

摘要

A light-emitter structure is provided. The light emitter structure includes a platform. An In_x(Al_yGa_1-y)_1-xP lower clad region is formed on the platform and has a lattice constant between approximately 5.49 Å and 5.62 Å. A strained quantum-well active region is formed on the lower clad region. An In_x(Al_yGa_1-y)_1-xP upper clad region is formed on the strained quantum well active region.