Low-Threshold InGaAs Strained-Layer Quantum-Well Lasers (Lambda=0.98 Micrometer)with GaInP Cladding Layers and Mass-Transported Buried Heterostructure

摘要

Buried-heterostructure quantum-well lasers fabricated by mass transport arereported for In(0.18)Ga(0.82)As/GaAs/Ga(0.5)I4n(0.5)P strained-layer structures grown by atmospheric pressure organometallic vapor-phase epitaxy. Threshold current densities as low as 85 A/cm2 are measured for broad-stripe lasers, and buried-stripe devices show threshold currents as low as 3 mA and differential quantum efficiencies as high as 34% per facet without coatings.