Dry etching method of thin film and manufacturing method of thin film semiconductor device

摘要

The present invention provides a method of manufacturing a semiconductor device, comprising: forming a resist pattern on a thin film to be processed; a first etching step of selectively dry-etching the target thin film under a first etching condition using the resist pattern as a mask; And a second etching step of selectively dry-etching the target thin film using a second etching condition different from the first etching condition using the first etching step and the second etching step, wherein the switching from the first etching step to the second etching step is performed by selectively Wherein the etching is performed immediately before the etching is completed. The present invention also provides a dry etching method and a manufacturing method of a thin film semiconductor device.