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POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT CIRCUIT CAPABILITIES AND METHODS OF MAKING SUCH DEVICES
POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT CIRCUIT CAPABILITIES AND METHODS OF MAKING SUCH DEVICES
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机译:具有改善的短路能力的基于功率碳化硅的MOSFET晶体管及其制造方法
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摘要
A power MOSFET includes a silicon carbide drift region having a first conductivity type, first and second well regions located in upper portions of the silicon carbide drift region that are doped with second conductivity dopants, and a channel region in a side portion of the first well region, an upper portion of the channel region having the first conductivity type, wherein a depth of the first well region is at least 1.5 microns and the depth of the first well region exceeds a distance between the first and second well regions.
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