首页> 外文OA文献 >Effects of Surface Treatment on the Electrical Properties of Ohmic Contacts to (In)GaN for High Performance Optical Devices

【2h】

Effects of Surface Treatment on the Electrical Properties of Ohmic Contacts to (In)GaN for High Performance Optical Devices

机译：表面处理对高性能光学器件（In）GaN欧姆接触电性能的影响

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
J. -s. Jang; S. -j. Park; T. -y. Seong;
展开▼
作者单位

展开▼
年度 2002
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices [J] . P. T. Puneetha, M. Siva Pratap Reddy, Young-Woong Lee, Journal of materials science . 2017,第22期

机译：用于高温MEMS器件的p型GaN上PdAl / Au金属合金欧姆接触的电和界面特性
2. Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique [J] . Yow-Jon Lin, Yow-Lin Chu Semiconductor science and technology . 2006,第8期

机译：覆盖层厚度对使用欧姆凹进技术的p-AlGaN和p-GaN上的Ni欧姆接触的电性能的影响
3. Surface and Electrical Properties of Inductively-coupled Plasma-etched N-face n-GaN and a Method of Reducing the Ohmic Contact Resistance of Plasma-damaged N-face n-GaN [J] . Tak JEONG, Hyun Haeng LEE, Kang Ho KIM, Journal of the Korean Physical Society . 2009,第3aPta1期

机译：电感耦合等离子刻蚀n面n-GaN的表面和电学性质以及降低等离子损坏n面n-GaN的欧姆接触电阻的方法
4. Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices [C] . Florovic M., Kovac J., Kordos P., International Conference on Advanced Semiconductor Devices and Microsystems . 2008

机译：Al 0.3 GA 0.7 N / GAN半导体器件的电气性能
5. Effects of Heat Treatment Conditions on Morphology, Optical Properties, and Performance of TiO2 in Dye Sensitized Solar Cells [D] . Hokemeir-Seim, Peter J. 2018

机译：热处理条件对染料敏化太阳能电池TiO2的形态学，光学性能和性能的影响
6. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT [O] . Cong Wang, Nam-Young Kim 2012

机译：AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
7. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contacts for AlGaN/GaN HEMT [O] . Cong Wang, Nam-Young Kim 2012

机译：用于AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
8. Self-Aligned-Gate GaN-HEMTs with Heavily-Doped n+-GaN Ohmic Contacts to 2DEG. [R] . Shinohara, K., Regan, D., Corrion, A., 2013

机译：具有重掺杂n + -GaN欧姆接触2DEG的自对准栅GaN-HEmT。

Effects of Surface Treatment on the Electrical Properties of Ohmic Contacts to (In)GaN for High Performance Optical Devices

著录项

引文网络

相似文献

相关主题

期刊订阅