Self-Aligned-Gate GaN-HEMTs with Heavily-Doped n+-GaN Ohmic Contacts to 2DEG.

摘要

We report record DC and RF performance obtained in deeply-scaled self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to two- dimensional electron-gas (2DEG). High density-of-states of three-dimensional (3D) n+-GaN source near the gate mit