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Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors

机译:薄电子束限定了用于垂直纳米线晶体管的氢Silsesquioxane间隔物

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摘要

A method to fabricate inorganic vertical spacer layers with well-controlled thickness down to 40 nm using electron beam exposure is demonstrated. These spacers are suitable in vertical nanowire transistor configuration. As spacer material, the authors use hydrogen silsesquioxane (HSQ), a material with low permittivity and high durability. They show that the resulting HSQ thickness can be controlled by electron dose used and it also depend on the initial thickness of the HSQ layer. To achieve good reproducibility, the authors found it necessary to fully submerge the nanowires beneath the HSQ layer initially and that the thickness of HSQ before exposure needs to be determined. Finally, they introduce these steps in an existing transistor process and demonstrate vertical nanowire transistors with high performance. (C) 2014 American Vacuum Society.
机译:一种方法,使用电子束曝光证明制造具有良好控制的厚度向下无机垂直间隔层至40nm。这些间隔件是适用于垂直纳米线晶体管结构。作为间隔物材料中,作者使用氢倍半硅氧烷(HSQ),具有低介电常数和高耐久性的材料。它们表明,所得到的厚度HSQ可以通过使用电子剂量来控制,它也依赖于HSQ层的初始厚度。为了达到良好的再现性,作者发现有必要充分浸没HSQ层之下的纳米线和最初要确定HSQ的前曝光需要的厚度。最后,他们在现有的晶体管工艺介绍这些步骤,并证明具有高性能垂直纳米线晶体管。 (C)听英语美国真空学会。

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