Hydrogen silsesquioxane electron beam lithography for ultra-small single electron transistors in silicon on insulator

摘要

A process for the fabrication of ultra-small silicon single electron transistors with 10 nm constrictions and 40 nm island diameters based on electron beam lithography with hydrogen silsesquioxane negative resist and reactive ion etching of a thin silicon on insulator device layer is presented. The observed Coulomb blockade at room temperature indicates that even at this size small dopant clusters are formed in highly doped material and act as effective islands in a multi-junction device.