基于单电子晶体管-金属氧化物场效应晶体管电路的离散混沌系统实现

摘要

A new method of realizing a discrete chaotic system using the hybrid architecture of single-electron transistor （SET） and metal oxide semiconductor （MOS） is proposed in this paper.The transfer characteristic for two parallel SETs with a biased current source is investigated and the corresponding S-shape piecewise linear function model is established.Based on this model a one-dimensional discrete mapping system is first constructed,and the dynamics of the system is then analyzed through one-dimensional mapping process bifurcation diagram and Lyapunov exponents,and the corresponding discrete chaotic system is finally designed through the electronic circuit of SET-MOS hybrid architecture.All these indicate that our approach not only is feasible but also has some advantages such as simple circuit structure and good integration compared with existing methods.%提出了一种利用单电子晶体管与金属氧化物半导体的混合结构（SET-MOS）实现离散混沌系统的方法.研究了两个并联结构的单电子晶体管在电流源偏置下的传输特性,并建立其相应的S形分段线性函数模型.基于该模型实现了一维离散映射系统,分析了它的动力学特性,包括一维映射过程、分岔图和Lyapunov指数等.最后利用SET-MOS混合电路设计出该离散混沌系统的电子电路,验证了理论分析和实现方法的正确性.研究结果表明,该方法不仅可行,而且物理实现结构简单,利于集成.