An electronic device comprising a method of fabricating a field effect transistor devices which are mounted on vertical nanowire mesh, the transistor device fabricated in this manner, the transistor device, and a processing unit having at least one electronic device

摘要

A process for fabricating a field-effect transistor device (20) implemented on a network of vertical nanowires (24), includes: producing a source electrode (26) and a drain electrode (30) at each end of each nanowire (24) symmetrically relative to the gate electrode of each elementary transistor implemented on a nanowire; creating a gate electrode by depositing a layer (38) of conductive material around a layer (36) of dielectric material that surrounds a portion of each nanowire (24), a single conductive layer (38) being used for all of the nanowires and the thickness of the conductive layer corresponding to the gate length of the transistor device; and insulating each electrode with a planar layer (32, 34) of a dielectric material in order to form a nanoscale gate and in order to insulate the contacts of each elementary transistor between the gate and the source and the gate and the drain.