BN-Al(X)Ga(1-X)N Based Heterostructure Field Effect Transistor Devices for High Temperature (350 deg C) Electronics Applications.

摘要

This report summarizes the progress made on the BN-Al(x)Ga(1-x)N based Heterostructure Field Effect Transistor (HFET) development program under contract number F49620-93-C-0059. The goal of this program is to develop high temperature heterostructure insulating gate (HIG) FET devices for integrated circuits operating in harsh environments. In particular, the insulator materials proposed for the device structure included CVD BN/AIN. While the HIGFET processed with the MIS structures employing BN/AIN and Si3N4 as the insulators yielded low transconductances, tremendous progresses have been made on the optimization of AlGaN/GaN based FET structure growth and the following device processing. These are highlighted by the operation of AlGaN/GaN based heterostructure FETs (HFETs) at 300 deg C. The same device also exhibited a cutoff frequency(f sub T) and maximum frequency of oscillation (fmax) of 22 GHz and 70 GHz at room temperature with a reasonable DC transconductance (23 mS/mm). jg p5.