DMOS Transistor Dope Profiling and Transient Enhanced Boron Diffusion Experiments

摘要

In this thesis, work on three subjects is presented. A new optimization strategyis proposed in chapter 2 to control overall computation times in TCAD optimization. In chapter 3, we present two novel nondestructive measurement techniques of the lateral doping profiles along the interface in the DMOST. In chapter 4, experiments on enhanced diffusion phenomena during ion implantation damage annealing are presented. Finally, we analyze the profile evolution of the DMOS profiles, in view of damage annealing effects.