Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile

摘要

This paper reports the electrical performances of a RF SOI power LDMOS transistor with a retrograde doping profile in the entire drift region. A comparison between retrograde and conventional uniformly doped drift SOI power LDMOS transistors is provide by means of a numerical simulation analysis. The proposed structures exhibit better performances in terms of trapped electron distribution and transconductance degradation with no modification of the breakdown voltage capability. Simulation results show that, at a given bias conditions, the reduction of lateral electric field peak at the silicon surface due to the implementation of the retrograde doping profile accounts for the observed reduction of the hot carrier degradation effect.