Photoluminescence of 1.8 ML InAs Quantum Dots Grown by SMEE on GaAs(100) Misoriented Surface.

摘要

Photoluminescence (PL) study results of lnAs/GaAs quantum dot (QD) arrays obtained by submonolayer migration enhanced epitaxy on GaAs (100) substrates misoriented towards 001 DIRECTION AT InAs thickness fixed to 1.8 monolayers are reported. It is shown that PL peaks from QDs are shifted towards shorter wavelengths and their full width at half maxima decreases from 95 meV to 33 meV as misorientation angle raises from 0 to 7 degrees, corresponding to the decrease of mean lateral size of QDs and of the dispersion of their size distribution. The temperature dependence of PL spectra at 4.2-300 K may indicate to two maxima in the QDs size distribution.