a multi-layered polovodicovu00e1 epitaxnu00ed structure with inas / gaas quantum teckami and gaassb cover and stress reducing layer of heteroprechod even.type between inas quantum teckou and gaassb layer and umoznuju00edcu00ed issue elektroluminiscencu00ed on growing telecommunications wavelength of 1300 nm. the conservation heteroprechodu even.type for these wavelengths is reached gradovanu00fdm slozenu00edm gaas.sub.1 - x.n.sb.sub.x.n.the layers so that the middle classes in gaassb was nizsu00ed concentration of sb (x = 0.03 - 0,09) alert in quantum tecek,(cu00edmz is zabezpecena dostatecnu00e1 barrier for holes in the inas quantum tecku00e1ch and their localization in quantum tecku00e1ch)in the epitaxnu00edho growth concentration of antimony in gaassb vzrustu00e1 maximum concentration, which is in the range of x = 0.15 - 0.30.(this is necessary snu00edzenu00ed tensions reached inside quantum tecek and extend emitted wavelengths).the structure can be realized with a continuous relief concentration of antimony or stupnovite using two or more layers.
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